이희덕 교수_Effects of thermal annealing on analog resistive switching behavior in bilayer HfO2/ZnO synaptic devices: the role of ZnO grain boundaries | |||||
분류 | 논문 | 작성자 | 미래국방지능형ICT교육연구단 | ||
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조회수 | 105 | 등록일 | 2024.04.12 | ||
Effects of thermal annealing on analog resistive switching behavior in bilayer HfO2/ZnO synaptic devices: the role of ZnO grain boundarie
Abstract The effects of thermal annealing on analog resistive switching behavior in bilayer HfO2/ZnO synaptic devices were investigated. The annealed active ZnO layer between the top Pd electrode and the HfO2 layer exhibited electroforming-free resistive switching. In particular, the switching uniformity, stability, and reliability of the synaptic devices were dramatically improved via thermal annealing at 600 °C atomic force microscopy and X-ray diffraction analyses revealed that active ZnO films demonstrated increased grain size upon annealing from 400 °C to 700 °C, whereas the ZnO film thickness and the annealing of the HfO2 layer in bilayer HfO2/ZnO synaptic devices did not profoundly affect the analog switching behavior. The optimized thermal annealing at 600 °C in bilayer HfO2/ZnO synaptic devices dramatically improved the nonlinearity of long-term potentiation/depression properties, the relative coefficient of variation of the asymmetry distribution σ/μ, and the asymmetry ratio, which approached 1. The results offer valuable insights into the implementation of highly robust synaptic devices in neural networks. https://pubs.rsc.org/en/content/articlelanding/2024/nr/d3nr04917e |