| 김철영 교수_A Low-Power High-IP1dB Low-Noise Amplifier Using Large-Transistor and Class-AB Mode | |||||
| 분류 | 논문 | 작성자 | 미래국방지능형ICT교육연구단 | ||
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| 조회수 | 208 | 등록일 | 2024.04.12 | ||
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IEEE Microwave and Wireless Technology Letters ( Volume: 34, Issue: 3, March 2024) A Low-Power High-IP2dB Low-Noise Amplifier Using Large-Transistor and Class-AB Mode
Min-Seok Baek; Han-Woong Choi; Joon-Hyung Kim; Jae-Hyeok Song; Jae-Eun Lee; Jeong-Taek Son; Choul-Young Kim Abstract This letter presents a Ku-band high-input 1-dB compression point (IP1dB) and low-power low-noise amplifier (LNA). The large-transistor technique is employed to enhance IP1dB with low noise figure (NF) for first stage. Differential ClassAB topology is adopted to improve the output 1-dB compression point (OP1dB) and lower power consumption for output stage. To validate the proposed approach, we implemented a two-stage common-source (CS) LNA using 65-nm bulk complementary metal–oxide–semiconductor (CMOS) technology. Experimental results achieved a minimum NF of 1.94 dB and peak gain of 19.98 dB. The measured IP1dB is −7.8 dBm at 13 GHz, the highest among modern CMOS Ku-band LNAs. The LNA operates with a power consumption of 10 mA at a 1-V supply voltage and occupies a compact core size of 0.80 × 0.26 mm2 . Index Terms— Class AB, complementary metal–oxide– semiconductor (CMOS), gain extension, Ku-band, large transistor, P1dB, single-to-differential low-noise amplifier (LNA). https://ieeexplore.ieee.org/document/10387515 |
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